Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser
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چکیده
Selective Contact Anneal Effects on Indium Oxide Nanowire Transistors using Femtosecond Laser Seongmin Kim, Sunkook Kim, Pornsak Srisungsitthisunti, Chunghun Lee, Min Xu, Peide D. Ye, Minghao Qi, Xianfan Xu, Chongwu Zhou, Sanghyun Ju,* and David B. Janes* School of Electrical and Computer Engineering and Birck Nanotechnology Center and School of Mechanical Engineering and Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, United States Department of Electrical Engineering, University of Southern California, Los Angeles, California 90089, United States Department of Physics, Kyonggi University, Suwon, Gyeonggi-Do 443-760, Republic of Korea
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